- molecular-beam epitaxy
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молекулярная (молекулярно-пучковая) эпитаксия
Англо-русский словарь технических терминов. 2005.
molecular-beam epitaxy
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Molecular-beam epitaxy — (MBE), is one of several methods of depositing single crystals. It was invented in the late 1960s at Bell Telephone Laboratories by J. R. Arthur and Alfred Y. Cho.MethodMolecular beam epitaxy takes place in high vacuum or ultra high vacuum (10−8… … Wikipedia
molecular beam epitaxy — Molecular Beam Epitaxy (MBE) Молекулярно лучевая эпитаксия (МЛЭ) Процесс и технология осаждения эпитаксиальных пленок полупроводников путем испарения материалов при низком давлении. Применяется для изготовления сложных структур. Позволяет… … Толковый англо-русский словарь по нанотехнологии. - М.
Molecular beam epitaxy — A simple sketch showing the main components and rough layout and concept of the main chamber in a Molecular Beam Epitaxy system Molecular beam epitaxy (MBE) is one of several methods of depositing single crystals. It was invented in the late… … Wikipedia
silicon molecular-beam epitaxy — molekulinė silicio epitaksija statusas T sritis radioelektronika atitikmenys: angl. silicon molecular beam epitaxy vok. Silizium Molekularstrahlepitaxie, f rus. молекулярно пучковая эпитаксия кремния, f pranc. épitaxie de silicium par jet… … Radioelektronikos terminų žodynas
molecular beam epitaxy — noun a technique, used in the production of thin films of ultra pure semiconductors, that grows the film by condensation of evaporated atoms … Wiktionary
molecular beam epitaxy — noun : a process for manufacturing microelectronic devices by depositing very thin layers of material on a substrate crystal one layer of molecules at a time … Useful english dictionary
Chemical beam epitaxy — (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III V semiconductor systems. This form of epitaxial growth is performed in an ultrahigh vacuum system. The reactants are in the form of molecular… … Wikipedia
chemical beam epitaxy — noun a form of molecular beam epitaxy that uses a gaseous source … Wiktionary
Epitaxy — refers to the method of depositing a monocrystalline film on a monocrystalline substrate. The deposited film is denoted as epitaxial film or epitaxial layer. The term epitaxy comes from a Greek root ( epi above and taxis in ordered manner ) which … Wikipedia
epitaxy — /ep i tak see/, n., pl. epitaxies. Crystall. epitaxis. * * * ▪ crystallography the process of growing a crystal of a particular orientation on top of another crystal, where the orientation is determined by the underlying crystal. The… … Universalium
Ion Beam Mixing — is a process for adhering two multilayers, especially a substrate and deposited surface layer. The process involves bombarding layered samples with doses of ion radiation in order to promote mixing at the interface, and generally serves as a… … Wikipedia
