transistor bias circuit
101Active load — An active or dynamic load is a component or a circuit behaving as a current stable nonlinear resistor. This term may refer to a component of circuit design, or to a type of test equipment. Contents 1 Circuit design 1.1 Common base example 1.2… …
102DC to DC converter — In electronic engineering, a DC to DC converter is a circuit which converts a source of direct current (DC) from one voltage level to another. It is a class of power converter. Usage DC to DC converters are important in portable electronic… …
103Transconductance — Transconductance, also known as mutual conductance[citation needed], is a property of certain electronic components. Conductance is the reciprocal of resistance; transconductance, meanwhile, is the ratio of the current change at the output port… …
104Cat's-whisker detector — Galena cat s whisker detector Precision cat s whisker d …
105Gate turn-off thyristor — For other uses of the word, see GTO (disambiguation). GTO thyristor symbol A gate turn off thyristor (GTO) is a special type of thyristor, a high power semiconductor device. GTOs, as opposed to normal thyristors, are fully controllable switches… …
106Output impedance — The output impedance, source impedance, or internal impedance of an electronic device is the opposition exhibited by its output terminals to an alternating current (AC) of a particular frequency as a result of resistance, inductance and… …
107Magnetic amplifier — The magnetic amplifier (colloquially known as a mag amp ) is an electromagnetic device for amplifying electrical signals. The magnetic amplifier was invented early in the 20th century, and was used as an alternative to vacuum tube amplifiers… …
108Historique des tubes électroniques — Article principal : Tube électronique. Le tube électronique a longtemps été le seul composant actif existant. Il a permis la fabrication, souvent en grande série, des premiers appareils électroniques : récepteur radio, télévision, radar …
109Channel length modulation — Cross section of a MOSFET operating in the saturation region One of several short channel effects in MOSFET scaling, channel length modulation (CLM) is a shortening of the length of the inverted channel region with increase in drain bias for… …
110Scattering parameters — or S parameters are properties used in electrical engineering, electronics engineering, and communication systems engineering describing the electrical behavior of linear electrical networks when undergoing various steady state stimuli by small… …
