threshold gate voltage
21Biological neuron model — A biological neuron model (also known as spiking neuron model) is a mathematical description of the properties of nerve cells, or neurons, that is designed to accurately describe and predict biological processes. This is in contrast to the… …
22Thyristor — The thyristor is a solid state semiconductor device with four layers of alternating N and P type material. They act as bistable switches, conducting when their gate receives a current pulse, and continue to conduct for as long as they are forward …
23Electron mobility — This article is about the mobility for electrons and holes in metals and semiconductors. For the general concept, see Electrical mobility. In solid state physics, the electron mobility characterizes how quickly an electron can move through a… …
24Reverse Short Channel Effect — The reverse short channel effect is a secondary effect describing the reduction in threshold voltage Vth in MOSFETs with non uniformly doped channel regions as the gate length increases. Since drive current is primarily determined by Vth, longer… …
25Lau Wai Shing — Wai Shing Lau (simplified Chinese name: 刘偉成, born July 29, 1955 in Hong Kong) is also known as Lau Wai Shing. The family name of Lau is sometimes spelled as Liu like Liu Bang (founder of the Han dynasty) or Liu Shaoqi or Liu Bocheng. This is… …
26Low dropout regulator — A low dropout or LDO regulator is a DC linear voltage regulator which can operate with a very small input output differential voltage. The main components are a power FET and a differential amplifier (error amplifier). One input of the… …
27Cavity magnetron — Magnetron with section removed (magnet is not shown) …
28Depolarizing pre-pulse — A depolarizing pre pulse (DPP) is an electrical stimulus that causes the potential difference measured across a neuronal membrane to become more positive or less negative, and precedes another electrical stimulus.[1] DPPs may be of either the… …
29Drain Induced Barrier Lowering — As channel length decreases, the barrier φB to be surmounted by an electron from the source on its way to the drain reduces Drain induced barrier lowering or DIBL is a secondary effect in MOSFETs referring originally to a reduction of threshold… …
30Metall-Oxid-Halbleiter-Feldeffekttransistor — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) gehört zu den Feldeffekttransistoren mit isoliertem Gate, auch als IGFET bezeichnet. Er ist den… …
