semiconductor laser diode
91Berthold Leibinger Innovationspreis — The Berthold Leibinger Innovationspreis is an innovation prize for applied laser technology open for participants world wide. It is biennially awarded by the German non profit foundation Berthold Leibinger Stiftung for innovations on the… …
92Robert N. Hall — (b. December 25, 1919) is an American engineer. He demonstrated the first semiconductor laser, and invented a type of magnetron commonly used in microwave ovens. He also contributed to the development of rectifiers for power transmission.Hall was …
93Direct bandgap — In semiconductor physics, a direct bandgap means that the minimum energy of the conduction band lies directly above the maximum energy of the valence band in momentum space. In a direct bandgap semiconductor, electrons at the conduction band… …
94Canesta — Infobox Company company name = Canesta, Inc. company company type = Private foundation = 1999 location city = flagicon|USA Sunnyvale, California location country = USA key people = Jim Spare, CEO Abbas Rafii, Executive VP Cyrus Bamji, CTO Patrick …
95Talbot cavity — A talbot cavity is an external cavity used for the coherent combining of output from multiple laser diodes arranged in an array. It is generally constructed with a single mirror at half the talbot distance from the output facet of the laser array …
96Pyrotechnic initiator — A pyrotechnic initiator (also initiator or igniter) is a device containing a pyrotechnic composition used primarily to ignite other, more difficult to ignite materials, e.g. thermites, gas generators, and solid fuel rockets. The name is often… …
97Diamante — Para otros usos de este término, véase Diamante (desambiguación). Diamante General Categoría Minerales elementos (no metales) Clase …
98Arsenic — (pronEng|ˈɑrsənɪk) is a chemical element that has the symbol As and atomic number of 33. Arsenic was first documented by Albertus Magnus in 1250cite book |last=Emsley |first=John |title=Nature s Building Blocks: An A Z Guide to the Elements |year …
99Indium(III) phosphide — Chembox new Name = Indium(III) phosphide ImageFile = Indium(III) phosphide.jpg ImageSize = 200px ImageName = Indium(III) phosphide IUPACName = Indium phosphide OtherNames = Indium(III) phosphide Name = Section1 = Chembox Identifiers CASNo = 22398 …
100Aluminium gallium nitride — (AlGaN) is a semiconductor material. It is an alloy of aluminium nitride and gallium nitride.AlGaN is used to manufacture light emitting diodes operating in blue to ultraviolet region, where wavelengths down to 250 nm (far UV) were achieved. It… …
