power diode

  • 21IMPATT diode — An IMPATT diode (IMPact ionization Avalanche Transit Time) is a form of high power diode used in high frequency electronics and microwave devices. They are typically made with silicon carbide owing to their high breakdown fields.They operate at… …

    Wikipedia

  • 22Light-emitting diode — LED redirects here. For other uses, see LED (disambiguation). Light emitting diode Red, pure green and blue LEDs of the 5mm diffused type Type Passive, optoelectronic Working principle Electr …

    Wikipedia

  • 23Schottky diode — The Schottky diode (named after German physicist Walter H. Schottky; also known as hot carrier diode) is a semiconductor diode with a low forward voltage drop and a very fast switching action.In the early days of wireless, cat s whisker detectors …

    Wikipedia

  • 24Microwave power meter — A microwave power meter is an instrument which measures the electrical power at microwave frequencies. Usually a microwave power meter will consist of a measuring head which contains the actual power sensing element, connected via a cable to the… …

    Wikipedia

  • 25Organic light-emitting diode — Demonstration of a flexible OLED device A green emitting OLED device An …

    Wikipedia

  • 26PIN diode — Layers of a PIN diode A PIN diode is a diode with a wide, lightly doped near intrinsic semiconductor region between a p type semiconductor and an n type semiconductor region. The p type and n type regions are typically heavily doped because they… …

    Wikipedia

  • 27AC power plugs and sockets — See also: Industrial and multiphase power plugs and sockets Plugs and sockets may sometimes combine male and female contacts, but t …

    Wikipedia

  • 28Zener diode — A Zener diode is a type of diode that permits current in the forward direction like a normal diode, but also in the reverse direction if the voltage is larger than the breakdown voltage known as Zener knee voltage or Zener voltage . The device… …

    Wikipedia

  • 29Tunnel diode — A tunnel diode or Esaki diode is a type of semiconductor diode which is capable of very fast operation, well into the microwave frequency region, by using quantum mechanical effects. It was invented in 1958 by Leo Esaki, who in 1973 received the… …

    Wikipedia

  • 30Fast-recovery epitaxial diode field-effect transistor — Ein fast recovery epitaxial diode field effect transistor (auch fast reverse epitaxial diode field effect transistor abgekürzt FREDFET oder FredFET, englisch) ist ein spezieller Leistungsfeldeffekttranssistor, welcher besonders zum Schalten von… …

    Deutsch Wikipedia