polysilicon self-aligned process
1Self-aligned gate — A self aligned gate is a design arrangement where a highly doped gate in a MOSFET is used as a mask for the doping of the source and drain around it. This technique ensures that the gate will always overlap the edges of the source and drain. The… …
2self-aligned polysilicon-gate MOS process — MOP darinių su susitapatinančiomis polikristalinio silicio užtūromis technologija statusas T sritis radioelektronika atitikmenys: angl. self aligned polysilicon gate MOS process vok. selbstjustierende MOS Polysiliziumtechnik, f rus. технология… …
3MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up …
4Integrated circuit — Silicon chip redirects here. For the electronics magazine, see Silicon Chip. Integrated circuit from an EPROM memory microchip showing the memory blocks, the supporting circuitry and the fine silver wires which connect the integrated circuit die… …
5LOCOS-Prozess — LOCOS, kurz für englisch Local Oxidation of Silicon (dt. »lokale Oxidation von Silicium«, ist in der Halbleitertechnik ein Verfahren zur elektrischen Isolation von Bauelementen (meist Transistoren). Dafür wird der Silicium Wafer an… …
6Microelectromechanical system oscillator — Microelectromechanical system (MEMS) oscillators are timing devices that generate highly stable reference frequencies. These reference frequencies are used to sequence electronic systems, manage data transfer, define radio frequencies, and… …
7Polycide — is a silicide formed over polysilicon. Widely used in DRAMs. In a polycide MOS transistor process, the silicide is formed only over the polysilicon film as formation occurs prior to any polysilicon etch. Polycide processes contrast with salicide… …
8MOP darinių su susitapatinančiomis polikristalinio silicio užtūromis technologija — statusas T sritis radioelektronika atitikmenys: angl. self aligned polysilicon gate MOS process vok. selbstjustierende MOS Polysiliziumtechnik, f rus. технология МОП структур с самосовмещёнными поликремниевыми затворами, f pranc. technologie de… …
9selbstjustierende MOS-Polysiliziumtechnik — MOP darinių su susitapatinančiomis polikristalinio silicio užtūromis technologija statusas T sritis radioelektronika atitikmenys: angl. self aligned polysilicon gate MOS process vok. selbstjustierende MOS Polysiliziumtechnik, f rus. технология… …
10technologie de structure MOS à grilles en polysilicium auto-alignées — MOP darinių su susitapatinančiomis polikristalinio silicio užtūromis technologija statusas T sritis radioelektronika atitikmenys: angl. self aligned polysilicon gate MOS process vok. selbstjustierende MOS Polysiliziumtechnik, f rus. технология… …
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