p channel metal oxide semiconductor
1buried-channel metal-oxide-semiconductor — MOP darinys su paslėptuoju kanalu statusas T sritis radioelektronika atitikmenys: angl. buried channel metal oxide semiconductor; buried channel MOS structure vok. Metall Oxid Halbleiter Struktur mit vergrabenem Kanal, f; MOS Struktur mit… …
2n-channel metal-oxide-semiconductor transistor — MOP tranzistorius su n kanalu statusas T sritis radioelektronika atitikmenys: angl. n channel metal oxide semiconductor transistor; n channel MOS transistor vok. n Kanal MOS Transistor, m rus. n канальный МОП транзистор, m; МОП транзистор с… …
3p-channel metal-oxide-semiconductor transistor — MOP tranzistorius su p kanalu statusas T sritis radioelektronika atitikmenys: angl. p channel metal oxide semiconductor transistor vok. p Kanal MOS Transistor, m rus. МОП транзистор с каналом p типа, m; р канальный МОП транзистор, m pranc.… …
4Metal Oxide Semiconductor — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch: metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) ist eine Variante der Feldeffekttransistoren mit isoliertem Gate (IGFET), genauer der Metall Isolator… …
5Metal Oxide Semiconductor Field Effect Transistor — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch: metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) ist eine Variante der Feldeffekttransistoren mit isoliertem Gate (IGFET), genauer der Metall Isolator… …
6Double Diffused Metal Oxide Semiconductor Field Effect Transistor — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch: metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) ist eine Variante der Feldeffekttransistoren mit isoliertem Gate (IGFET), genauer der Metall Isolator… …
7metal oxide semiconductor field-effect transistor — field effect transistor in which the gate is separated from the conducting channel by an insulation, MOSFET (Electronics) …
8Semiconductor device — Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most …
9semiconductor device — ▪ electronics Introduction electronic circuit component made from a material that is neither a good conductor nor a good insulator (hence semiconductor). Such devices have found wide applications because of their compactness, reliability,… …
10Metal gate — A metal gate, in the context of a lateral Metal Oxide Semiconductor MOS stack, is just that the gate material is made from a metal. For decades, the industry had moved away from metal as the gate material in the MOS stack due to fabrication… …
