on the grain boundaries
121Bauschinger effect — The Bauschinger effect refers to a property of materials where the material s stress strain characteristics change as a result of the microscopic stress distribution of the material. For example, an increase in tensile yield strength at the… …
122Alexandria Port — The Port of Alexandria is on the West Verge of the Nile Delta between the Mediterranean Sea and Mariut Lake in Alexandria, Egypt. Considered the second most important city and the main port in Egypt, it handles over three quarters of Egypt’s… …
123International Fusion Materials Irradiation Facility — The International Fusion Material Irradiation Facility, also known as IFMIF, is an international scientific research program designed to test materials for suitability for use in a fusion reactor. The IFMIF, planned by Japan, the European Union,… …
124Maritime history — The Clipper Ship Flying Cloud off the Needles, Isle of Wight, off the southern English coast. Painting by James E. Buttersworth Maritime history is the study of human activity at sea. It covers a broad thematic element of history that often uses… …
125Manor of Alverton — The Manor of Alverton was a former manorial estate located in Cornwall, UK. Contents 1 History 1.1 Relationship with Penzance 2 Lords of the Manor of Alverton 3 …
126Maaser Rishon — The Maaser Rishon, meaning First Tithe in Hebrew (derived from the word eser , meaning tenth), is the setting aside of one tenth of income and produce each year, as a tithe given to the Levites. The tithe is discussed in the Priestly Code,… …
127Deal-Grove model — The Deal Grove model mathematically describes the growth of an oxide layer on the surface of a material. In particular, it is used to analyze thermal oxidation of silicon in semiconductor device fabrication. The model was first published in 1965… …
128Deal–Grove model — The Deal–Grove model mathematically describes the growth of an oxide layer on the surface of a material. In particular, it is used to analyze thermal oxidation of silicon in semiconductor device fabrication. The model was first published in 1965… …
