metal-oxide semiconductor transistor
61Memristor — Type Passive Working principle Memristance Invented Leon Chua (1971) First production HP Labs (2008) Electronic symbol …
62Thin-film transistor — A thin film transistor (TFT) is a special kind of field effect transistor made by depositing thin films of a semiconductor active layer as well as the dielectric layer and metallic contacts over a supporting substrate. A common substrate is glass …
63Indium(III) oxide — Chembox new Name = Indium(III) oxide ImageName = Indium(III) oxide OtherNames = indium trioxide Section1 = Chembox Identifiers CASNo = 1312 43 2 Section2 = Chembox Properties Formula = In2O3 MolarMass = 277.64 g/mol Appearance = yellowish green… …
64MOS — [ mos ] n. m. • v. 1980; acronyme de l angl. Metal Oxyde Semiconductor ♦ Électron. Transistor à effet de champ, à grille isolée par une couche d oxyde de silicium. Adjt Les technologies MOS, utilisant ce type de transistor. ● MOS nom masculin… …
65VMOS — (pronEng|ˈviːmɒs), is an acronym for Vertical Metal Oxide Semiconductor (Transistor). Vmos is also used to describe the V groove shape vertically cut into the substrate material metal oxide semiconductor transistor.The V shape of the MOSFET s… …
66Fairchild Semiconductor Corporation — ▪ American company American electronics company that shares credit with Texas Instruments Incorporated for the invention of the integrated circuit. Founded in 1957 in Santa Clara, California, Fairchild was among the earliest firms to… …
67Programmable logic device — A programmable logic device or PLD is an electronic component used to build reconfigurable digital circuits. Unlike a logic gate, which has a fixed function, a PLD has an undefined function at the time of manufacture. Before the PLD can be used… …
68Circuito integrado — Circuitos integrados de memoria con una ventana de cristal de cuarzo que posibilita su borrado mediante radiación ultravioleta. Un circuito integrado (CI), también conocido como chip o microchip, es una pastilla pequeña de material semiconductor …
69MOP tranzistorius su n kanalu — statusas T sritis radioelektronika atitikmenys: angl. n channel metal oxide semiconductor transistor; n channel MOS transistor vok. n Kanal MOS Transistor, m rus. n канальный МОП транзистор, m; МОП транзистор с каналом n типа, m pranc. transistor …
70n-канальный МОП-транзистор — MOP tranzistorius su n kanalu statusas T sritis radioelektronika atitikmenys: angl. n channel metal oxide semiconductor transistor; n channel MOS transistor vok. n Kanal MOS Transistor, m rus. n канальный МОП транзистор, m; МОП транзистор с… …
