metal-insulator-metal-insulator-semiconductor structure
1metal-insulator-semiconductor structure — metalo dielektriko puslaidininkio darinys statusas T sritis radioelektronika atitikmenys: angl. metal insulator semiconductor structure vok. Metall Isolator Halbleiter Struktur, f rus. структура металл диэлектрик полупроводник, f pranc. structure …
2bulk metal-insulator-semiconductor structure — tūrinis MDP darinys statusas T sritis radioelektronika atitikmenys: angl. bulk metal insulator semiconductor structure; bulk MIS structure vok. Volumen Metall Isolator Halbleiter Struktur, f; Volumen MIS Struktur, f rus. объёмная МДП структура, f …
3thermal nitridation metal-insulator-semiconductor — termiškai nitridintas MDP darinys statusas T sritis radioelektronika atitikmenys: angl. thermal nitridation metal insulator semiconductor; thermal nitridation MIS structure vok. MOS Struktur mit thermischer Nitrierung, f rus. МДП структура с… …
4complementary metal-insulator-semiconductor — jungtinis MDP darinys statusas T sritis radioelektronika atitikmenys: angl. complementary metal insulator semiconductor; complementary MIS; complementary MIS structure vok. komplementäre MIS Struktur, f rus. комплементарная МДП структура, f pranc …
5semiconductor device — ▪ electronics Introduction electronic circuit component made from a material that is neither a good conductor nor a good insulator (hence semiconductor). Such devices have found wide applications because of their compactness, reliability,… …
6structure métal-isolant-semi-conducteur — metalo dielektriko puslaidininkio darinys statusas T sritis radioelektronika atitikmenys: angl. metal insulator semiconductor structure vok. Metall Isolator Halbleiter Struktur, f rus. структура металл диэлектрик полупроводник, f pranc. structure …
7structure MIS de volume — tūrinis MDP darinys statusas T sritis radioelektronika atitikmenys: angl. bulk metal insulator semiconductor structure; bulk MIS structure vok. Volumen Metall Isolator Halbleiter Struktur, f; Volumen MIS Struktur, f rus. объёмная МДП структура, f …
8Semiconductor device — Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most …
9structure métal-isolant-semi-conducteur à nitruration thermique — termiškai nitridintas MDP darinys statusas T sritis radioelektronika atitikmenys: angl. thermal nitridation metal insulator semiconductor; thermal nitridation MIS structure vok. MOS Struktur mit thermischer Nitrierung, f rus. МДП структура с… …
10structure métal-isolant-semi-conducteur complémentaire — jungtinis MDP darinys statusas T sritis radioelektronika atitikmenys: angl. complementary metal insulator semiconductor; complementary MIS; complementary MIS structure vok. komplementäre MIS Struktur, f rus. комплементарная МДП структура, f pranc …
