low-energy ion implantation
1low-energy ion implantation — mažos energijos jonų implantavimas statusas T sritis radioelektronika atitikmenys: angl. low energy ion implantation vok. Implantation von Ionen niedriger Energien, f rus. имплантация ионов низкой энергии, f pranc. implantation d ions de basse… …
2Implantation von Ionen niedriger Energien — mažos energijos jonų implantavimas statusas T sritis radioelektronika atitikmenys: angl. low energy ion implantation vok. Implantation von Ionen niedriger Energien, f rus. имплантация ионов низкой энергии, f pranc. implantation d ions de basse… …
3implantation d'ions de basse énergie — mažos energijos jonų implantavimas statusas T sritis radioelektronika atitikmenys: angl. low energy ion implantation vok. Implantation von Ionen niedriger Energien, f rus. имплантация ионов низкой энергии, f pranc. implantation d ions de basse… …
4Ion Beam Mixing — is a process for adhering two multilayers, especially a substrate and deposited surface layer. The process involves bombarding layered samples with doses of ion radiation in order to promote mixing at the interface, and generally serves as a… …
5Static secondary ion mass spectrometry — Static secondary ion mass spectrometry, or static SIMS is a technique for chemical analysis including elemental composition and chemical structure of the uppermost atomic or molecular layer of a solid which may be a metal, semiconductor or… …
6Threshold displacement energy — The threshold displacement energy Td is the minimum kinetic energy that an atom in a solid needs to be permanently displaced from its lattice site to a defect position. It is also known as displacement threshold energy or just displacement energy …
7Focused ion beam — Focused ion beam, also known as FIB, is a technique used particularly in the semiconductor and materials science fields for site specific analysis, deposition, and ablation of materials. The FIB is a scientific instrument that resembles a… …
8Deep reactive-ion etching — (DRIE) is a highly anisotropic etch process used to create deep penetration, steep sided holes and trenches in wafers, with aspect ratios of 20:1 or more. It was developed for microelectromechanical systems (MEMS), which require these features,… …
9mažos energijos jonų implantavimas — statusas T sritis radioelektronika atitikmenys: angl. low energy ion implantation vok. Implantation von Ionen niedriger Energien, f rus. имплантация ионов низкой энергии, f pranc. implantation d ions de basse énergie, f …
10имплантация ионов низкой энергии — mažos energijos jonų implantavimas statusas T sritis radioelektronika atitikmenys: angl. low energy ion implantation vok. Implantation von Ionen niedriger Energien, f rus. имплантация ионов низкой энергии, f pranc. implantation d ions de basse… …
