ion implantation
121įžambusis jonų implantavimas — statusas T sritis radioelektronika atitikmenys: angl. angled ion implantation; tilt angle ion implantation vok. Schrägimplantation, f rus. ионная имплантация под углом к поверхности, f pranc. implantation ionique à l angle de surface, f;… …
122ионная имплантация под углом к поверхности — įžambusis jonų implantavimas statusas T sritis radioelektronika atitikmenys: angl. angled ion implantation; tilt angle ion implantation vok. Schrägimplantation, f rus. ионная имплантация под углом к поверхности, f pranc. implantation ionique à l… …
123Boron — (pronEng|ˈbɔərɒn) is a chemical element with atomic number 5 and the chemical symbol B. Boron is a trivalent nonmetallic element which occurs abundantly in the evaporite ores borax and ulexite. Boron is never found as a free element on… …
124Microfabrication — Synthetic detail of a micromanufactured integrated circuit through four layers of planarized copper interconnect, down to the polysilicon (pink), wells (greyish) and substrate (green) Microfabrication is the term that describes processes of… …
125Glass electrode — A glass electrode is a type of ion selective electrode made of a doped glass membrane that is sensitive to a specific ion. It is an important part of the instrumentation for chemical analysis and physico chemical studies. In modern practice,… …
126spectroscopy — spectroscopist /spek tros keuh pist/, n. /spek tros keuh pee, spek treuh skoh pee/, n. the science that deals with the use of the spectroscope and with spectrum analysis. [1865 70; SPECTRO + SCOPY] * * * Branch of analysis devoted to identifying… …
127Semiconductor device fabrication — Semiconductor manufacturing processes 10 µm 1971 3 µm 1975 1.5 µm 1982 …
128Silicon on insulator — technology (SOI) refers to the use of a layered silicon insulator silicon substrate in place of conventional silicon substrates in semiconductor manufacturing, especially microelectronics, to reduce parasitic device capacitance and thereby… …
