ion implantation
111Collision cascade — A classical molecular dynamics computer simulation of a collision cascade in Au induced by a 10 keV Au self recoil. This is a typical case of a collision cascade in the heat spike regime. Each small sphere illustrates the position of an atom, in… …
112Ионная имплантация — Схема установки для ионной имплантации и селекции ионов по энергии. Ионная имплантация  способ введения атомов примесей в поверхностный слой пластины или эпитаксиальной пленки путем бомбардировки ег …
113Implantación de iones — Sistema de implantación de iones en las instalaciones del Laboratorio de Análisis y Arquitectura de Sistemas (LAAS) de Toulouse, Francia. La implantación de iones es un proceso propio de la ingeniería de materiales por el cual los iones de un… …
114Plasma Immersions Ionenimplantation — Bei der Plasma Immersions Ionenimplantation handelt es sich um ein Vakuumverfahren zur meist großflächigen Implantation von Ionen in Festkörperoberflächen. Es ist daher eng verwandt mit der Ionenimplantation. Das wesentlichste Merkmal ist das… …
115Octodecaborane — Chembox new Name = Octadecaborane ImageFile = OtherNames = octadecaborane; octadecaboron doicosahydride; octodecaborane; n Octadecaborane; i Octadecaborane Name = Properties Section1 = Chembox Identifiers CASNo = 21107 56 2 Section2 = Chembox… …
116Octadecaborane — Octadecaborane(22) Other names octadecaborane; octadecaboron doicosahydride; octodecaborane; n Octadecaborane; i Octadecaborane Identifiers CAS number …
117Materials science — Simulation of the outside of the Space Shuttle as it heats up to over 1,500 °C (2,730 °F) during re entry into the Earth s atmosphere Materials science is an interdisciplinary field applying the properties of matter to various areas of… …
118Self-aligned gate — A self aligned gate is a design arrangement where a highly doped gate in a MOSFET is used as a mask for the doping of the source and drain around it. This technique ensures that the gate will always overlap the edges of the source and drain. The… …
119Depletion-load NMOS logic — Depletion load nMOS/NMOS (n channel metal oxide semiconductor) is a form of nMOS logic family which uses depletion mode n type MOSFETs as load transistors as a method to enable single voltage operation and achieve greater speed than possible with …
120Schrägimplantation — įžambusis jonų implantavimas statusas T sritis radioelektronika atitikmenys: angl. angled ion implantation; tilt angle ion implantation vok. Schrägimplantation, f rus. ионная имплантация под углом к поверхности, f pranc. implantation ionique à l… …
