high-ohmic semiconductor
31Martin Pope — Dr. Martin Pope (1978) Martin Pope (b. August 22, 1918) is a physical chemist and professor emeritus at New York University. His discoveries of ohmic contacts and research in the fields of organic insulators and semiconductors led to techniques… …
32Metall-Oxid-Halbleiter-Feldeffekttransistor — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) gehört zu den Feldeffekttransistoren mit isoliertem Gate, auch als IGFET bezeichnet. Er ist den… …
33Current source — Figure 1: An ideal current source, I, driving a resistor, R, and creating a voltage V A current source is an electrical or electronic device that delivers or absorbs electric current. A current source is the dual of a voltage source. The term… …
34Gunn diode — A Gunn diode, also known as a transferred electron device (TED), is a form of diode used in high frequency electronics. It is somewhat unusual in that it consists only of N doped semiconductor material, whereas most diodes consist of both P and N …
35Negative resistance — is a property of some electric circuits where an increase in the current entering a port results in a decreased voltage across the same port. This is in contrast to a simple ohmic resistor, which exhibits an increase in voltage under the same… …
36Biasing — This article is about biasing in electronics. For other uses, see Biasing (disambiguation). Biasing in electronics is the method of establishing predetermined voltages and/or currents at various points of an electronic circuit to set an… …
37Electrical resistance — is a ratio of the degree to which an object opposes an electric current through it, measured in Ohms. Its reciprocal quantity is electrical conductance measured in Siemens. Assuming a uniform current density, an object s electrical resistance is… …
38Contact resistance — The term contact resistance refers to the contribution to the total resistance of a material which comes from the electrical leads and connections as opposed to the intrinsic resistance, which is an inherent property, independent of the… …
392N7000 — The 2N7000 is a N channel, enhancement mode MOSFET used for small signal switching applications. Packaged in a TO92 enclosure, the 2N7000 is a 60 volt device capable of switching in the 200 350 milliamp range with an on resistance of 0.3 5 ohms.… …
40Mercury selenide — Mercury(II) selenide IUPAC name Mercury selenide …
