high-ohmic semiconductor

  • 21Nantenna — Figure 1. Spectral irradiance of wavelengths in the solar spectrum. The red shaded area shows the irradiance at sea level. There is less irradiance at sea level due to absorption of light by the atmosphere. A nantenna (nanoantenna) is a… …

    Wikipedia

  • 22Electric current — Electromagnetism …

    Wikipedia

  • 23PIN diode — Layers of a PIN diode A PIN diode is a diode with a wide, lightly doped near intrinsic semiconductor region between a p type semiconductor and an n type semiconductor region. The p type and n type regions are typically heavily doped because they… …

    Wikipedia

  • 24p-n junction — A silicon p–n junction with no applied voltage. A p–n junction is formed at the boundary between a P type and N type semiconductor created in a single crystal of semiconductor by doping, for example by ion implantation, diffusion of dopants, or… …

    Wikipedia

  • 25P-n junction — A p n junction is a junction formed by combining P type and N type semiconductors together in very close contact. The term junction refers to the region where the two regions of the semiconductor meet. It can be thought of as the border region… …

    Wikipedia

  • 26Heterojunction bipolar transistor — The heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) which uses differing semiconductor materials for the emitter and base regions, creating a heterojunction. The HBT improves on the BJT in that it that can… …

    Wikipedia

  • 27Organic light-emitting diode — Demonstration of a flexible OLED device A green emitting OLED device An …

    Wikipedia

  • 28Multimeter — A digital multimeter A multimeter or a multitester, also known as a VOM (Volt Ohm meter), is an electronic measuring instrument that combines several measurement functions in one unit. A typical multimeter may include features such as the ability …

    Wikipedia

  • 29Mercury probe — The Mercury Probe is an electrical probing device to make rapid, non destructive contact to a sample for electrical characterization. Its primary application is semiconductor measurements where time consuming metallizations or photolithographic… …

    Wikipedia

  • 30GeSbTe — GeSbTe, or Germanium Antimony Tellurium, also known as GST, is a phase change material from the group of chalcogenide glasses, used in rewritable optical discs and phase change memory applications. Its recrystallization time is down to 20… …

    Wikipedia