heterostructure injection laser
1Laser diode — Top: a packaged laser diode shown with a penny for scale. Bottom: the laser diode chip is removed from the above package and placed on the eye of a needle for scale …
2Diode Laser — Une diode laser est un composant opto électronique à base de matériaux semi conducteurs. Elle émet de la lumière monochromatique cohérente (une puissance optique) destinée, entre autres, à transporter un signal contenant des informations (dans le …
3Diode laser — Une diode laser est un composant opto électronique à base de matériaux semi conducteurs. Elle émet de la lumière monochromatique cohérente (une puissance optique) destinée, entre autres, à transporter un signal contenant des informations (dans le …
4Dmitri Z. Garbuzov — Born October 27, 1940 Sverdlovsk, Russia Died August 20, 2006 Princeton, New Jersey Nationality …
5Federico Capasso — Infobox Scientist name = Federico Capasso caption = Federico Capasso birth date = 1949 birth place = Rome, Italy residence = U.S. nationality = American field = Physicist work institutions = Bell Laboratories Harvard University alma mater =… …
6Zhores Alferov — Infobox Scientist name = Zhores Alferov imagesize = birth date = birth date and age|1930|3|15 birth place = Vitebsk, Belarus death date = death place = residence = nationality = field = Physics work institution = Ioffe Physico Technical Institute …
7materials science — the study of the characteristics and uses of various materials, as glass, plastics, and metals. [1960 65] * * * Study of the properties of solid materials and how those properties are determined by the material s composition and structure, both… …
8Gallium(III) nitride — Chembox new Name = Gallium(III) nitride IUPACName = Gallium(III) nitride OtherNames = None Listed. Name = Section1 = Chembox Identifiers CASNo = 25617 97 4 Section2 = Chembox Properties Formula = GaN MolarMass = 83.7297 g/mol Appearance = Yellow… …
9Heterojunction bipolar transistor — The heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) which uses differing semiconductor materials for the emitter and base regions, creating a heterojunction. The HBT improves on the BJT in that it that can… …
