heterojunction

  • 41Anderson's rule — is used for the construction of energy band diagrams of the heterojunction between two semiconductor materials. It is also referred to as the electron affinity rule. Anderson s rule was first described by R. L. Anderson in 1960 (Anderson,… …

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  • 42semiconductor device — ▪ electronics Introduction       electronic circuit component made from a material that is neither a good conductor nor a good insulator (hence semiconductor). Such devices have found wide applications because of their compactness, reliability,… …

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  • 432DEG — A two dimensional electron gas (2DEG) is a gas of electrons free to move in two dimensions, but tightly confined in the third. This tight confinement leads to quantized energy levels for motion in that direction, which can then be ignored for… …

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  • 44Heterostructure-emitter bipolar transistor — The Heterojunction emitter bipolar transistor (HEBT), is a somewhat unique arrangement with respect to emitter blocking of minority carriers. This is accomplished by using heterostructure confinement in the emitter, introducing an energy barrier… …

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  • 45HJBT — Der Heterojunction Bipolartransistor (HBT bzw. HJBT) ist ein Bipolartransistor (BJT), dessen Emittermaterial anders als das der Basis gewählt ist. Dabei entsteht die namensgebende Heterostruktur. Er entspricht damit der bipolaren Ausführung eines …

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  • 46Halbleiter-Heterostrukturen — Bandenergien zweier Materialien unterschiedlicher Dotierung mit unterschiedlichem Bandabstand zwischen Valenzbandenergie Ev und Leitungsbandenergie Ec, ohne Kontakt …

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  • 47Halbleiterheterostrukturen — Bandenergien zweier Materialien unterschiedlicher Dotierung mit unterschiedlichem Bandabstand zwischen Valenzbandenergie Ev und Leitungsbandenergie Ec, ohne Kontakt …

    Deutsch Wikipedia

  • 48Heterostruktur — Bandenergien zweier Materialien unterschiedlicher Dotierung mit unterschiedlichem Bandabstand zwischen Valenzbandenergie Ev und Leitungsbandenergie Ec, ohne Kontakt …

    Deutsch Wikipedia

  • 49Copper indium gallium selenide solar cells — Copper indium gallium selenide (CuIn1 xGaxSe2 or CIGS) is a direct bandgap semiconductor useful for the manufacture of solar cells. Because the material strongly absorbs sunlight, a much thinner film is required than of other semiconductor… …

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  • 50MODFET — The modulated doping field effect transistor or modulation doped field effect transistor (MODFET) is a type of a field effect transistor, also known as the High Electron Mobility Transistor (HEMT). Like other FETs, MODFETs are used in integrated… …

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