epitaxial
121Metalorganic vapour phase epitaxy — (MOVPE), also known as organometallic vapour phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method of epitaxial growth of materials, especially compound semiconductors from the surface… …
122Lattice constant — The Lattice Constant refers to the constant distance between unit cells in a crystal lattice. Lattices in three dimensions generally have three lattice constants, referred to as a , b , and c . However, in the special case of cubic crystal… …
123Chemical beam epitaxy — (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III V semiconductor systems. This form of epitaxial growth is performed in an ultrahigh vacuum system. The reactants are in the form of molecular… …
124Bismuth ferrite — (BiFeO3, also commonly referred to as BFO in Materials Science) is an inorganic chemical compound with a perovskite structure. It is one of the most promising lead free piezoelectric materials by exhibiting multiferroic properties at room… …
125Diffraction topography — (short: topography ) is an X ray imaging technique based on Bragg diffraction. Diffraction topographic images ( topographs ) record the intensity profile of a beam of X rays (or, sometimes, neutrons) diffracted by a crystal. A topograph thus… …
126Robijn Bruinsma — Robijn F. Bruinsma (b. May 15, 1953, Haarlem, The Netherlands) is a theoretical physicist and is Professor of Physics at the University of California at Los Angeles and Chair of the Department of Theoretical Physics for the Life Sciences at… …
127Micropipe — A micropipe, also called micropore, microtube, capillary defect or pinhole defect, is a crystallographic defect in a single crystal substrate. Today this is of great interest to makers of silicon carbide (SiC) substrates which are used in a… …
128GaMnAs — Gallium manganese arsenide (abbreviated GaMnAs, or (Ga,Mn)As, or Ga1 xMnxAs) is a dilute III V magnetic semiconductor based on doping gallium arsenide (GaAs) with manganese (Mn). Manganese atoms are substituted for gallium, creating both a local… …
