electron mobility

  • 41Zinc oxide — Other names Zinc white Calamine Identifiers …

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  • 42Transistores HEMT — Sección de un transitor pHEMT de composición GaAs/AlGaAs/InGaAs Los HEMT, acrónimo del inglés High electron mobility transistor (Transistor de alta movilidad de electrones), también conocidos como HFET, acrónimo de Heterostructure FET (FET de… …

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  • 432DEG — A two dimensional electron gas (2DEG) is a gas of electrons free to move in two dimensions, but tightly confined in the third. This tight confinement leads to quantized energy levels for motion in that direction, which can then be ignored for… …

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  • 44Gallium(III) arsenide — Chembox new Name = Gallium arsenide ImageFile = Gallium arsenide.jpg ImageFile1 = Gallium arsenide unit cell 3D balls.png IUPACName = Gallium arsenide Section1 = Chembox Identifiers CASNo = 1303 00 0 SMILES = Ga#As Section2 = Chembox Properties… …

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  • 45Bradbury-Nielsen shutter — A Bradbury Nielsen shutter (or Bradbury Nielsen gate) is a type of electrical ion gate, which was first proposed in an article by Norris Bradbury and Russel A. Nielsen, where they used it as an electron filter. [cite journal | author = Norris E.… …

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  • 46Instabilité électrothermique — L instabilité électrothermique dite aussi instabilité de Velikhov ou instabilité d ionisation a été prédite par la théorie par le physicien russe Evgeny Velikhov en 1962, prédiction qui fut confirmée expérimentalement dès 1965[1]. C est une… …

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  • 47Liste elektrischer Bauelemente — Dieser Artikel listet elektrische beziehungsweise elektronische Bauelemente (auch Bauteile genannt) auf, die man für Schaltungen in der Elektrotechnik beziehungsweise Elektronik benötigt. Verschiedene elektronische Bauelemente Inhaltsverzeichnis …

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  • 48Band gap — This article is about solid state physics. For voltage control circuitry in electronics, see Bandgap voltage reference. In solid state physics, a band gap, also called an energy gap or bandgap, is an energy range in a solid where no electron… …

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  • 49Heterojunction — A heterojunction is the interface that occurs between two layers or regions of dissimilar crystalline semiconductors. These semiconducting materials have unequal band gaps as opposed to a homojunction. It is often advantageous to engineer the… …

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  • 50Magnetoresistance — is the property of a material to change the value of its electrical resistance when an external magnetic field is applied to it. The effect was first discovered by William Thomson (more commonly known as Lord Kelvin) in 1856, but he was unable to …

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