diffusion annealing
1diffusion annealing — podifuzinis atkaitinimas statusas T sritis radioelektronika atitikmenys: angl. diffusion annealing vok. Nachdiffusionstempern, n rus. последиффузионный отжиг, m pranc. recuit après la diffusion, m …
2Annealing (metallurgy) — Annealing, in metallurgy and materials science, is a heat treatment wherein a material is altered, causing changes in its properties such as strength and hardness. It is a process that produces conditions by heating to above the recrystallization …
3recuit après la diffusion — podifuzinis atkaitinimas statusas T sritis radioelektronika atitikmenys: angl. diffusion annealing vok. Nachdiffusionstempern, n rus. последиффузионный отжиг, m pranc. recuit après la diffusion, m …
4Rapid Thermal Annealing — Rapid Thermal Processing (dt.: schnelle thermische Bearbeitung) ist ein Überbegriff für die Bearbeitung von Wafern in einem Hochtemperaturprozess, bei dem eine sehr rasche Erhitzung des Wafers mit Halogenlampen erzielt wird. Inhaltsverzeichnis 1… …
5Nachdiffusionstempern — podifuzinis atkaitinimas statusas T sritis radioelektronika atitikmenys: angl. diffusion annealing vok. Nachdiffusionstempern, n rus. последиффузионный отжиг, m pranc. recuit après la diffusion, m …
6podifuzinis atkaitinimas — statusas T sritis radioelektronika atitikmenys: angl. diffusion annealing vok. Nachdiffusionstempern, n rus. последиффузионный отжиг, m pranc. recuit après la diffusion, m …
7последиффузионный отжиг — podifuzinis atkaitinimas statusas T sritis radioelektronika atitikmenys: angl. diffusion annealing vok. Nachdiffusionstempern, n rus. последиффузионный отжиг, m pranc. recuit après la diffusion, m …
8steel — steellike, adj. /steel/, n. 1. any of various modified forms of iron, artificially produced, having a carbon content less than that of pig iron and more than that of wrought iron, and having qualities of hardness, elasticity, and strength varying …
9Direct bonding — describes a wafer bonding process without any additional intermediate layers. The bonding process is based on chemical bonds between two surfaces of any material possible meeting numerous requirements.[1] These requirements are specified for the… …
10Monolayer doping — (MLD) is a well controlled, wafer scale surface doping technique first developed at the University of California, Berkeley, in 2007.[1] This work is aimed for attaining controlled doping of semiconductor materials with atomic accuracy, especially …
