dangling-bond

  • 1Dangling bond — In chemistry, a dangling bond is an unsatisfied valence on an immobilised atom. In order to gain enough electrons to fill their valence shells (see also octet rule), many atoms will form covalent bonds with other atoms. In the simplest case, that …

    Wikipedia

  • 2List of James Bond henchmen in Licence to Kill — A list of henchmen from the 1989 James Bond film Licence to Kill from the List of James Bond henchmen Contents 1 Dario 2 Perez 3 Braun 4 Ed Killifer …

    Wikipedia

  • 3List of James Bond allies in On Her Majesty's Secret Service — This is a list of James Bond allies in the film On Her Majesty s Secret Service. Contents 1 Recurring allies 2 Marc Ange Draco 3 Shaun Campbell 3.1 Novel biography …

    Wikipedia

  • 4Carrier scattering — Defect types include atom vacancies, adatoms, steps, and kinks which occur most frequently at surfaces due to finite material size causing crystal discontinuity. What all types of defects have in common, whether they be surface or bulk, is that… …

    Wikipedia

  • 5Amorphous silicon — (a Si) is the non crystalline allotropic form of silicon. Silicon is a four fold coordinated atom that is normally tetrahedrally bonded to four neighboring silicon atoms. In crystalline silicon this tetrahedral structure is continued over a large …

    Wikipedia

  • 6Crystallographic defect — Crystalline solids exhibit a periodic crystal structure. The positions of atoms or molecules occur on repeating fixed distances, determined by the unit cell parameters. However, the arrangement of atom or molecules in most crystalline materials… …

    Wikipedia

  • 7Hydrogen-terminated silicon surface — A hydrogen terminated silicon surface is a chemically passivated silicon substrate whose native oxide (SiO2) thin film is removed by etching in hydrogen fluoride aqueous solution, leaving the surface silicon atoms covalently bonded to hydrogen.… …

    Wikipedia

  • 8Thermal oxidation — In microfabrication, thermal oxidation is a way to produce a thin layer of oxide (usually silicon dioxide) on the surface of a wafer (semiconductor). The technique forces an oxidizing agent to diffuse into the wafer at high temperature and react… …

    Wikipedia

  • 9Lau Wai Shing — Wai Shing Lau (simplified Chinese name: 刘偉成, born July 29, 1955 in Hong Kong) is also known as Lau Wai Shing. The family name of Lau is sometimes spelled as Liu like Liu Bang (founder of the Han dynasty) or Liu Shaoqi or Liu Bocheng. This is… …

    Wikipedia

  • 10Negative bias temperature instability — (NBTI) is a key reliability issue in MOSFETs. It is of immediate concern in p channel MOS devices, since they almost always operate with negative gate to source voltage; however, the very same mechanism affects also nMOS transistors when biased… …

    Wikipedia