gate(d) oxide
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Gate oxide — The gate oxide is the third region of the MOSFET between the source and drain. It is a thin layer of pure, defect free, 5 200 nm thick thermally grown oxide. It serves as the dielectric layer so that the gate can sustain as high as 1 to 5 MV/cm… … Wikipedia
gate oxide — užtūros oksidas statusas T sritis radioelektronika atitikmenys: angl. gate oxide vok. Gate Oxid, n; Gateoxid, n rus. подзатворный оксид, m pranc. oxyde de grille, m … Radioelektronikos terminų žodynas
gate-oxide defect — užtūros oksido defektas statusas T sritis radioelektronika atitikmenys: angl. gate oxide defect vok. Gateoxidfehler, m rus. дефект подзатворного оксида, m pranc. défaut d oxyde de grille, m … Radioelektronikos terminų žodynas
gate-oxide integrity — užtūros oksido vientisumas statusas T sritis radioelektronika atitikmenys: angl. gate oxide integrity vok. Gateoxidintegrität, f rus. целостность подзатворного оксида, f pranc. intégrité d oxyde de grille, f … Radioelektronikos terminų žodynas
Gate dielectric — A gate dielectric is a dielectric used between the gate and substrate of a field effect transistor. In state of the art processes, the gate dielectric is subject to many constraints, including:* Electrically clean interface to the substrate (low… … Wikipedia
Gate-Oxid — užtūros oksidas statusas T sritis radioelektronika atitikmenys: angl. gate oxide vok. Gate Oxid, n; Gateoxid, n rus. подзатворный оксид, m pranc. oxyde de grille, m … Radioelektronikos terminų žodynas
Self-aligned gate — A self aligned gate is a design arrangement where a highly doped gate in a MOSFET is used as a mask for the doping of the source and drain around it. This technique ensures that the gate will always overlap the edges of the source and drain. The… … Wikipedia
Logic gate — A logic gate is an idealized or physical device implementing a Boolean function, that is, it performs a logical operation on one or more logic inputs and produces a single logic output. Depending on the context, the term may refer to an ideal… … Wikipedia
Double Diffused Metal Oxide Semiconductor Field Effect Transistor — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch: metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) ist eine Variante der Feldeffekttransistoren mit isoliertem Gate (IGFET), genauer der Metall Isolator… … Deutsch Wikipedia
Metal Oxide Semiconductor — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch: metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) ist eine Variante der Feldeffekttransistoren mit isoliertem Gate (IGFET), genauer der Metall Isolator… … Deutsch Wikipedia
Metal Oxide Semiconductor Field Effect Transistor — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch: metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) ist eine Variante der Feldeffekttransistoren mit isoliertem Gate (IGFET), genauer der Metall Isolator… … Deutsch Wikipedia
