- gate insulator
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подзатворный диэлектрик, изолирующий слой затвора (в полевых транзисторах)
Англо-русский словарь технических терминов. 2005.
Англо-русский словарь технических терминов. 2005.
High-k+Metal-Gate-Technik — Schematischer Querschnitt durch den Gate Aufbau eines Transistors in High k+Metal Gate Technik Die High k+Metal Gate Technik (HKMG Technik) bezeichnet in der Halbleitertechnik einen speziellen Aufbau von Metall Isolator Halbleiter… … Deutsch Wikipedia
Dual-Gate-MOSFET — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch: metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) ist eine Variante der Feldeffekttransistoren mit isoliertem Gate (IGFET), genauer der Metall Isolator… … Deutsch Wikipedia
Metal-insulator transition — Metal insulator transitions refer to changes in the transport properties of a given material. Roughly speaking, materials can be classified as metals, allowing for good conductivity of electric charges, and as insulators, where conductivity of… … Wikipedia
MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up … Wikipedia
Organic field-effect transistor — OFET based flexible display An organic field effect transistor (OFET) is a field effect transistor using an organic semiconductor in its channel. OFETs can be prepared either by vacuum evaporation of small molecules, by solution casting of… … Wikipedia
CMOS — For other uses, see CMOS (disambiguation). CMOS inverter (NOT logic gate) Complementary metal–oxide–semiconductor (CMOS) ( … Wikipedia
Antenna effect — The antenna effect, more formally plasma induced gate oxide damage, is an effect that can potentially cause yield and reliability problems during the manufacture of MOS integrated circuits [ T. Watanabe, Y. Yoshida, “Dielectric Breakdown of Gate… … Wikipedia
Electron mobility — This article is about the mobility for electrons and holes in metals and semiconductors. For the general concept, see Electrical mobility. In solid state physics, the electron mobility characterizes how quickly an electron can move through a… … Wikipedia
Power optimization (EDA) — Power optimization refers to the use of electronic design automation tools to optimize (reduce) the power consumption of a digital design, while preserving the functionality.Introduction and historyThe increasing speed and complexity of today’s… … Wikipedia
Contact resistance — The term contact resistance refers to the contribution to the total resistance of a material which comes from the electrical leads and connections as opposed to the intrinsic resistance, which is an inherent property, independent of the… … Wikipedia
Leakage — describes an unwanted loss, or leak, of something which escapes from its proper location. In everyday usage, leakage is the gradual escape of matter through a leak hole. [ [http://www.m w.com/dictionary/leaking Merriam Webster] ] In different… … Wikipedia