- doped layer
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легированный слой
Англо-русский словарь технических терминов. 2005.
Англо-русский словарь технических терминов. 2005.
highly-doped layer — stipriai legiruotas sluoksnis statusas T sritis radioelektronika atitikmenys: angl. high concentration layer; highly doped layer vok. hochdotierte Schicht, f rus. сильнолегированный слой, m pranc. couche fortement dopée, f … Radioelektronikos terminų žodynas
high-concentration layer — stipriai legiruotas sluoksnis statusas T sritis radioelektronika atitikmenys: angl. high concentration layer; highly doped layer vok. hochdotierte Schicht, f rus. сильнолегированный слой, m pranc. couche fortement dopée, f … Radioelektronikos terminų žodynas
arsenic-doped epitaxial layer — epitaksinis arsenu legiruotas sluoksnis statusas T sritis radioelektronika atitikmenys: angl. arsenic doped epitaxial layer vok. arsendotierte Epitaxieschicht, f rus. эпитаксиальный слой, легированный мышьяком, m pranc. couche épitaxiale dopée… … Radioelektronikos terminų žodynas
Multijunction photovoltaic cell — Multi junction solar cells or tandem cells are solar cells containing several p n junctions. Each junction is tuned to a different wavelength of light, reducing one of the largest inherent sources of losses, and thereby increasing efficiency.… … Wikipedia
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Cathode — Diagram of a copper cathode in a galvanic cell (e.g., a battery). A positive current i flows out of the cathode (CCD mnemonic: Cathode Current Departs). A cathode is an electrode through which electric current flows out of a polarized electrical… … Wikipedia
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Memristor — Type Passive Working principle Memristance Invented Leon Chua (1971) First production HP Labs (2008) Electronic symbol … Wikipedia
Induced high electron mobility transistor — In contrast to a modulation doped HEMT, an induced high electron mobility transistor provides the flexibility to tune different electron densities with a top gate. Since the charge carriers are induced to the 2DEG plane rather than created by… … Wikipedia