- dopant [doping] profile
-
профиль распределения (легирующей) примеси
Англо-русский словарь технических терминов. 2005.
dopant [doping] profile
Смотреть что такое "dopant [doping] profile" в других словарях:
dopant distribution profile — legiravimo priemaišų profilis statusas T sritis radioelektronika atitikmenys: angl. dopant distribution profile; impurity doping profile vok. Störstellendotierungsprofil, n rus. профиль распределения легирующей примеси, m pranc. profil d impureté … Radioelektronikos terminų žodynas
impurity doping profile — legiravimo priemaišų profilis statusas T sritis radioelektronika atitikmenys: angl. dopant distribution profile; impurity doping profile vok. Störstellendotierungsprofil, n rus. профиль распределения легирующей примеси, m pranc. profil d impureté … Radioelektronikos terminų žodynas
Dopant (Kamen Rider) — The Dopants (ドーパント, Dōpanto?) are the fictional antagonists in the Kamen Rider Series Kamen Rider W. Dopants are normal humans who use Gaia Memories. The Gaia Memories are aspects of the true Gaia Memory (地球の記憶, Chikyū no Kioku … Wikipedia
Monolayer doping — (MLD) is a well controlled, wafer scale surface doping technique first developed at the University of California, Berkeley, in 2007.[1] This work is aimed for attaining controlled doping of semiconductor materials with atomic accuracy, especially … Wikipedia
radiation measurement — ▪ technology Introduction technique for detecting the intensity and characteristics of ionizing radiation, such as alpha, beta, and gamma rays or neutrons, for the purpose of measurement. The term ionizing radiation refers to those… … Universalium
Heterojunction — A heterojunction is the interface that occurs between two layers or regions of dissimilar crystalline semiconductors. These semiconducting materials have unequal band gaps as opposed to a homojunction. It is often advantageous to engineer the… … Wikipedia
Störstellendotierungsprofil — legiravimo priemaišų profilis statusas T sritis radioelektronika atitikmenys: angl. dopant distribution profile; impurity doping profile vok. Störstellendotierungsprofil, n rus. профиль распределения легирующей примеси, m pranc. profil d impureté … Radioelektronikos terminų žodynas
legiravimo priemaišų profilis — statusas T sritis radioelektronika atitikmenys: angl. dopant distribution profile; impurity doping profile vok. Störstellendotierungsprofil, n rus. профиль распределения легирующей примеси, m pranc. profil d impureté dopante, m … Radioelektronikos terminų žodynas
profil d'impureté dopante — legiravimo priemaišų profilis statusas T sritis radioelektronika atitikmenys: angl. dopant distribution profile; impurity doping profile vok. Störstellendotierungsprofil, n rus. профиль распределения легирующей примеси, m pranc. profil d impureté … Radioelektronikos terminų žodynas
профиль распределения легирующей примеси — legiravimo priemaišų profilis statusas T sritis radioelektronika atitikmenys: angl. dopant distribution profile; impurity doping profile vok. Störstellendotierungsprofil, n rus. профиль распределения легирующей примеси, m pranc. profil d impureté … Radioelektronikos terminų žodynas
Depletion-load NMOS logic — Depletion load nMOS/NMOS (n channel metal oxide semiconductor) is a form of nMOS logic family which uses depletion mode n type MOSFETs as load transistors as a method to enable single voltage operation and achieve greater speed than possible with … Wikipedia
