MOS

I сокр. от mean opinion score

средняя экспертная оценка

II сокр. от metal-oxide-semiconductor

структура (типа) металл - оксид - полупроводник, МОП-структура

-
adjustable-threshold MOS
-
aluminum-gate MOS
-
back-gate MOS
-
beam-addressed MOS
-
bipolar MOS
-
bulk complementary MOS
-
buried channel MOS
-
buried-oxide MOS
-
clocked complementary MOS
-
complementary MOS
-
depletion MOS
-
dielectric insulated MOS
-
dielectric isolated MOS
-
diffusion self-aligned MOS
-
double polysilicon MOS
-
double poly MOS
-
double-diffused MOS
-
double-implanted MOS
-
dynamic complementary MOS
-
enhancement MOS
-
enhancement/depletion MOS
-
floating-gate avalanche injection MOS
-
floating-gate MOS
-
high-density MOS
-
high-performance complementery MOS
-
high-threshold MOS
-
high-voltage MOS
-
insulated gate MOS
-
ion-implanted MOS
-
isolated gate MOS
-
junction gate MOS
-
lateral planar MOS
-
local oxidation MOS
-
long MOS
-
low-threshold MOS
-
metal-gate MOS
-
micrometer MOS
-
micron MOS
-
n-channel MOS
-
p-channel MOS
-
polysilicon self-aligned MOS
-
poly self-aligned MOS
-
power MOS
-
quadruple self-aligned MOS
-
refractory MOS
-
resistive-gate MOS
-
scaled-down MOS
-
scaled MOS
-
Schottky-barrier MOS
-
self-aligned MOS
-
silicon-gate technology MOS
-
silicon-gate MOS
-
silicon-on-sapphire complementary MOS
-
stacked transistors complementary MOS
-
submicrometer MOS
-
submicron MOS
-
surface gate MOS
-
three-dimensional MOS
-
transverse MOS
-
triple-polysilicon MOS
-
triple-poly MOS
-
V-groove MOS
-
V MOS