vapor epitaxy
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Epitaxy — refers to the method of depositing a monocrystalline film on a monocrystalline substrate. The deposited film is denoted as epitaxial film or epitaxial layer. The term epitaxy comes from a Greek root ( epi above and taxis in ordered manner ) which … Wikipedia
vapor-phase epitaxy — garinė epitaksija statusas T sritis radioelektronika atitikmenys: angl. vapor phase epitaxy vok. Dampfphasenepitaxie, f; Epitaxie aus der Dampfphase, f rus. эпитаксия из паровой фазы, f pranc. épitaxie en phase vapeur, f … Radioelektronikos terminų žodynas
vapor levitation epitaxy — garinė epitaksija ant plūduriųjų plokštelių statusas T sritis radioelektronika atitikmenys: angl. vapor levitation epitaxy vok. Dampfphasenepitaxie auf dem Levitationszustandswafer, f rus. эпитаксия из паровой фазы на плавающих пластинах, f pranc … Radioelektronikos terminų žodynas
vapor-phase epitaxy wafer — garinės epitaksijos plokštelė statusas T sritis radioelektronika atitikmenys: angl. vapor phase epitaxy wafer vok. Dampfphasenepitaxiewafer, m rus. пластина с эпитаксиальным слоем из паровой фазы, f pranc. tranche d épitaxie en phase vapeur, f … Radioelektronikos terminų žodynas
Chemical beam epitaxy — (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III V semiconductor systems. This form of epitaxial growth is performed in an ultrahigh vacuum system. The reactants are in the form of molecular… … Wikipedia
Chemical vapor deposition — DC plasma (violet) enhances the growth of carbon nanotubes in this laboratory scale PECVD apparatus. Chemical vapor deposition (CVD) is a chemical process used to produce high purity, high performance solid materials. The process is often used in … Wikipedia
Deposición de vapor mediante procesos químicos organometálicos — La epitaxia metalorgánica en fase de vapor (del inglés, Metalorganic vapour phase epitaxy MOVPE) es un método de deposición química vaporosa con el que se produce un crecimiento epitaxial de ciertos materiales, en concreto de los compuestos… … Wikipedia Español
Molecular beam epitaxy — A simple sketch showing the main components and rough layout and concept of the main chamber in a Molecular Beam Epitaxy system Molecular beam epitaxy (MBE) is one of several methods of depositing single crystals. It was invented in the late… … Wikipedia
Molecular-beam epitaxy — (MBE), is one of several methods of depositing single crystals. It was invented in the late 1960s at Bell Telephone Laboratories by J. R. Arthur and Alfred Y. Cho.MethodMolecular beam epitaxy takes place in high vacuum or ultra high vacuum (10−8… … Wikipedia
Chemical vapor deposition — Unter dem Begriff chemische Gasphasenabscheidung (englisch chemical vapor deposition, CVD) versteht man eine Gruppe von Beschichtungsverfahren, welche unter anderem bei der Herstellung von mikroelektronischen Bauelementen eingesetzt werden.… … Deutsch Wikipedia
metallo-organic vapor-phase epitaxy — garinė metalo ir organinio junginio epitaksija statusas T sritis radioelektronika atitikmenys: angl. metallo organic vapor phase epitaxy vok. metallorganische Gasphasenepitaxie, f rus. эпитаксия металлоорганического соединения из паровой фазы, f… … Radioelektronikos terminų žodynas
