- thermally grown oxide
- термически выращенный оксид
Большой англо-русский и русско-английский словарь. 2001.
thermally grown oxide
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Gate oxide — The gate oxide is the third region of the MOSFET between the source and drain. It is a thin layer of pure, defect free, 5 200 nm thick thermally grown oxide. It serves as the dielectric layer so that the gate can sustain as high as 1 to 5 MV/cm… … Wikipedia
Buffered oxide etch — Buffered oxide etch, also known as buffered HF or BHF, is a wet etchant used in microfabrication. Its primary use is in etching thin films of silicon dioxide (SiO2) or silicon nitride (Si3N4). It is comprised of a mixture of a buffering agent,… … Wikipedia
Thermal barrier coating — Thermal barrier coatings are highly advanced material systems applied to metallic surfaces, such as gas turbine or aero engine parts, operating at elevated temperatures. These coatings serve to insulate metallic components from large and… … Wikipedia
LOCOS-Prozess — LOCOS, kurz für englisch Local Oxidation of Silicon (dt. »lokale Oxidation von Silicium«, ist in der Halbleitertechnik ein Verfahren zur elektrischen Isolation von Bauelementen (meist Transistoren). Dafür wird der Silicium Wafer an… … Deutsch Wikipedia
LOCOS — LOCOS, kurz für Local Oxidation of Silicon (dt. »lokale Oxidation von Silicium«, ist in der Halbleitertechnik ein Verfahren zur elektrischen Isolation von Bauelementen (meist Transistoren). Dafür wird der Silicium Wafer an ausgewählten Stellen… … Deutsch Wikipedia
Organic field-effect transistor — OFET based flexible display An organic field effect transistor (OFET) is a field effect transistor using an organic semiconductor in its channel. OFETs can be prepared either by vacuum evaporation of small molecules, by solution casting of… … Wikipedia
Fluorescence interference contrast microscopy — Fluorescence interference contrast (FLIC) microscopy is a microscopic technique developed to achieve z resolution on the nanometer scale. FLIC occurs whenever fluorescent objects are in the vicinity of a reflecting surface (e.g. Si wafer). The… … Wikipedia
Charge-coupled device — A specially developed CCD used for ultraviolet imaging in a wire bonded package. A charge coupled device (CCD) is a device for the movement of electrical charge, usually from within the device to an area where the charge can be manipulated, for… … Wikipedia
OFET — An Organic Field Effect Transistor (OFET) is a field effect transistor using an organic semiconductor in its channel. OFETs can be prepared either by vacuum evaporation of small molecules, or by solution casting of polymers or small molecules.… … Wikipedia
Metal-semiconductor junction — is a type of junction in which a metal comes in close contact with a semiconductor material. Similar to a p n junction, it has rectifying properties. History The rectification property of metal semiconductor contacts was discovered by Ferdinand… … Wikipedia
Эффект поля — в МОП структуре Эффект поля (англ. Field effect) в широком смысле состоит в управлении эле … Википедия
