space-charge region width
Смотреть что такое "space-charge region width" в других словарях:
space charge zone width — erdvinio krūvio srities plotis statusas T sritis fizika atitikmenys: angl. space charge zone width vok. Breite der Raumladungszone, f rus. ширина области пространственного заряда, f pranc. largeur de région de charge d’espace, f … Fizikos terminų žodynas
Depletion region — In semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region or the space charge region, is an insulating region within a conductive, doped semiconductor material where the mobile charge carriers… … Wikipedia
largeur de région de charge d’espace — erdvinio krūvio srities plotis statusas T sritis fizika atitikmenys: angl. space charge zone width vok. Breite der Raumladungszone, f rus. ширина области пространственного заряда, f pranc. largeur de région de charge d’espace, f … Fizikos terminų žodynas
Charge-coupled device — A specially developed CCD used for ultraviolet imaging in a wire bonded package. A charge coupled device (CCD) is a device for the movement of electrical charge, usually from within the device to an area where the charge can be manipulated, for… … Wikipedia
Amazonas Region — This article is about a region in Peru. For the region in Colombia, see Amazon Region of Colombia. For the Brazilian state, see Amazonas (Brazilian state). Amazonas Region Region … Wikipedia
p-n junction — A silicon p–n junction with no applied voltage. A p–n junction is formed at the boundary between a P type and N type semiconductor created in a single crystal of semiconductor by doping, for example by ion implantation, diffusion of dopants, or… … Wikipedia
P-n junction — A p n junction is a junction formed by combining P type and N type semiconductors together in very close contact. The term junction refers to the region where the two regions of the semiconductor meet. It can be thought of as the border region… … Wikipedia
Power MOSFET — A Power MOSFET is a specific type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) designed to handle large power. Compared to the other power semiconductor devices (IGBT, Thyristor...), its main advantages are high commutation speed … Wikipedia
Deep-level transient spectroscopy — (DLTS) is an experimental tool for studying electrically active defects (known as charge carrier traps) in semiconductors. DLTS establishes fundamental defect parameters and measures their concentration in the material. Some of the parameters are … Wikipedia
Breite der Raumladungszone — erdvinio krūvio srities plotis statusas T sritis fizika atitikmenys: angl. space charge zone width vok. Breite der Raumladungszone, f rus. ширина области пространственного заряда, f pranc. largeur de région de charge d’espace, f … Fizikos terminų žodynas
erdvinio krūvio srities plotis — statusas T sritis fizika atitikmenys: angl. space charge zone width vok. Breite der Raumladungszone, f rus. ширина области пространственного заряда, f pranc. largeur de région de charge d’espace, f … Fizikos terminų žodynas
