- polysilicon self-aligned MOS
- МОП-структура с самосовмещенными поликремниевыми затворами
Большой англо-русский и русско-английский словарь. 2001.
polysilicon self-aligned MOS
Смотреть что такое "polysilicon self-aligned MOS" в других словарях:
self-aligned polysilicon-gate MOS process — MOP darinių su susitapatinančiomis polikristalinio silicio užtūromis technologija statusas T sritis radioelektronika atitikmenys: angl. self aligned polysilicon gate MOS process vok. selbstjustierende MOS Polysiliziumtechnik, f rus. технология… … Radioelektronikos terminų žodynas
selbstjustierende MOS-Polysiliziumtechnik — MOP darinių su susitapatinančiomis polikristalinio silicio užtūromis technologija statusas T sritis radioelektronika atitikmenys: angl. self aligned polysilicon gate MOS process vok. selbstjustierende MOS Polysiliziumtechnik, f rus. технология… … Radioelektronikos terminų žodynas
technologie de structure MOS à grilles en polysilicium auto-alignées — MOP darinių su susitapatinančiomis polikristalinio silicio užtūromis technologija statusas T sritis radioelektronika atitikmenys: angl. self aligned polysilicon gate MOS process vok. selbstjustierende MOS Polysiliziumtechnik, f rus. технология… … Radioelektronikos terminų žodynas
MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up … Wikipedia
LOCOS-Prozess — LOCOS, kurz für englisch Local Oxidation of Silicon (dt. »lokale Oxidation von Silicium«, ist in der Halbleitertechnik ein Verfahren zur elektrischen Isolation von Bauelementen (meist Transistoren). Dafür wird der Silicium Wafer an… … Deutsch Wikipedia
Integrated circuit — Silicon chip redirects here. For the electronics magazine, see Silicon Chip. Integrated circuit from an EPROM memory microchip showing the memory blocks, the supporting circuitry and the fine silver wires which connect the integrated circuit die… … Wikipedia
Metal gate — A metal gate, in the context of a lateral Metal Oxide Semiconductor MOS stack, is just that the gate material is made from a metal. For decades, the industry had moved away from metal as the gate material in the MOS stack due to fabrication… … Wikipedia
Polycide — is a silicide formed over polysilicon. Widely used in DRAMs. In a polycide MOS transistor process, the silicide is formed only over the polysilicon film as formation occurs prior to any polysilicon etch. Polycide processes contrast with salicide… … Wikipedia
MOP darinių su susitapatinančiomis polikristalinio silicio užtūromis technologija — statusas T sritis radioelektronika atitikmenys: angl. self aligned polysilicon gate MOS process vok. selbstjustierende MOS Polysiliziumtechnik, f rus. технология МОП структур с самосовмещёнными поликремниевыми затворами, f pranc. technologie de… … Radioelektronikos terminų žodynas
технология МОП-структур с самосовмещёнными поликремниевыми затворами — MOP darinių su susitapatinančiomis polikristalinio silicio užtūromis technologija statusas T sritis radioelektronika atitikmenys: angl. self aligned polysilicon gate MOS process vok. selbstjustierende MOS Polysiliziumtechnik, f rus. технология… … Radioelektronikos terminų žodynas
