- poly silicon layer
- слой поликристаллического кремния, слой поликремния
Большой англо-русский и русско-английский словарь. 2001.
Большой англо-русский и русско-английский словарь. 2001.
Silicon on sapphire — (SOS) is a hetero epitaxial process for integrated circuit manufacturing that consists of a thin layer (typically thinner than 0.6 micrometres) of silicon grown on a sapphire (Al2O3) wafer. SOS is part of the Silicon on Insulator (SOI) family of… … Wikipedia
Silicon carbide — Chembox new Name = Silicon carbide ImageFile = Silicon carbide 3D balls.png ImageSize = 140px ImageName = Ball and stick model of part of a crystal of SiC ImageFile1 = silicon carbide detail.jpg ImageSize1 = 140px OtherNames = Section1 = Chembox… … Wikipedia
Poly(methyl methacrylate) — This article is about the transparent plastic sometimes called acrylic glass. For the glass/plastic laminate often called safety glass , see laminated glass. Poly(methyl methacrylate) … Wikipedia
Polycrystalline silicon — Polycrystalline silicon, also called polysilicon, is a material consisting of small silicon crystals. It differs from single crystal silicon, used for electronics and solar cells, and from amorphous silicon, used for thin film devices and solar… … Wikipedia
Crystalline silicon — is a material consisting of one or more small silicon crystals. Polycrystalline silicon Polycrystalline silicon (or polysilicon, poly Si, or simply poly in context) is a material consisting of multiple small silicon crystals.Polycrystalline… … Wikipedia
Organic field-effect transistor — OFET based flexible display An organic field effect transistor (OFET) is a field effect transistor using an organic semiconductor in its channel. OFETs can be prepared either by vacuum evaporation of small molecules, by solution casting of… … Wikipedia
Deal–Grove model — The Deal–Grove model mathematically describes the growth of an oxide layer on the surface of a material. In particular, it is used to analyze thermal oxidation of silicon in semiconductor device fabrication. The model was first published in 1965… … Wikipedia
Deal-Grove model — The Deal Grove model mathematically describes the growth of an oxide layer on the surface of a material. In particular, it is used to analyze thermal oxidation of silicon in semiconductor device fabrication. The model was first published in 1965… … Wikipedia
Thin film transistor liquid crystal display — A thin film transistor liquid crystal display (TFT LCD) is a variant of liquid crystal display (LCD) which uses thin film transistor (TFT) technology to improve image quality (e.g. addressability, contrast). TFT LCD is one type of active matrix… … Wikipedia
Field-effect transistor — FET redirects here. For other uses, see FET (disambiguation). High power N channel field effect transistor The field effect transistor (FET) is a transistor that relies on an electric field to control the shape and hence the conductivity of a… … Wikipedia
Mostek — Not to be confused with MOS Technology. For other uses, see Mostek (disambiguation). Mostek was an integrated circuit manufacturer, founded in 1969 by ex employees of Texas Instruments. Initially their products were manufactured in Worcester,… … Wikipedia