- narrow-bandgap material
- узкозонный материал, материал с узкой запрещенной зоной
Большой англо-русский и русско-английский словарь. 2001.
narrow-bandgap material
Смотреть что такое "narrow-bandgap material" в других словарях:
Laser diode — Top: a packaged laser diode shown with a penny for scale. Bottom: the laser diode chip is removed from the above package and placed on the eye of a needle for scale … Wikipedia
Multijunction photovoltaic cell — Multi junction solar cells or tandem cells are solar cells containing several p n junctions. Each junction is tuned to a different wavelength of light, reducing one of the largest inherent sources of losses, and thereby increasing efficiency.… … Wikipedia
Metamaterial — Negative index metamaterial array configuration, which was constructed of copper split ring resonators and wires mounted on interlocking sheets of fiberglass circuit board. The total array consists of 3 by 20×20 unit cells with overall dimensions … Wikipedia
High Electron Mobility Transistor — HEMT stands for High Electron Mobility Transistor, and is also called heterostructure FET (HFET) or modulation doped FET (MODFET). A HEMT is a field effect transistor incorporating a junction between two materials with different band gaps (i.e. a … Wikipedia
Metalloid — 13 14 15 16 17 2 B Boron … Wikipedia
Scanning electron microscope — These pollen grains taken on an SEM show the characteristic depth of field of SEM micrographs … Wikipedia
semiconductor device — ▪ electronics Introduction electronic circuit component made from a material that is neither a good conductor nor a good insulator (hence semiconductor). Such devices have found wide applications because of their compactness, reliability,… … Universalium
Band gap — This article is about solid state physics. For voltage control circuitry in electronics, see Bandgap voltage reference. In solid state physics, a band gap, also called an energy gap or bandgap, is an energy range in a solid where no electron… … Wikipedia
Mercury(II) cadmium(II) telluride — HgCdTe or mercury cadmium telluride (also cadmium mercury telluride, MCT or CMT) is an alloy of CdTe and HgTe and is sometimes claimed to be the third semiconductor of technological importance after silicon and gallium(III) arsenide. The amount… … Wikipedia
Mercury cadmium telluride — HgCdTe or mercury cadmium telluride (also cadmium mercury telluride, MCT or CMT) is an alloy of CdTe and HgTe and is sometimes claimed to be the third semiconductor of technological importance after silicon and gallium(III) arsenide. The amount… … Wikipedia
Ohmic contact — An ohmic contact is a region on a semiconductor device that has been prepared so that the current voltage (I V) curve of the device is linear and symmetric. If the I V characteristic is non linear and asymmetric, the contact is not ohmic, but is… … Wikipedia
