float-zone technique
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Float-zone silicon — is a high purity alternative to silicon grown by the Czochralski process. The concentrations of impurities, such as carbon and oxygen, are extremely low. Impurities such as nitrogen, which are thought to bring about an improvement in mechanical… … Wikipedia
Zone melting — is a method of separation by melting in which a molten zone traverses a long ingot of impure metal or chemical. In its common use for purification, the molten region melts impure solid at its forward edge and leaves a wake of purer material… … Wikipedia
zone melting — a process of purifying any of various metals and other materials, as germanium or silicon, by passing it in bar form through an induction coil. Also called zone refining. Cf. cage zone melting. [1955 60] * * * Any of a group of techniques used to … Universalium
Bridgman-Stockbarger technique — The Bridgman Stockbarger technique is a method of growing single crystal ingots or boules. The method involves heating polycrystalline material in a container above its melting point and slowly cooling it from one end where a seed crystal is… … Wikipedia
STS-77 — Infobox Space mission mission name = STS 77 insignia = STS 77 patch.svg shuttle = Endeavour launch pad = 39 B launch = May 19, 1996, 6:30:00.066 am EDT landing = May 29, 1996, 7:09:18 am EDT, KSC, Runway 33 duration = 10 days, 0 hours, 40 minutes … Wikipedia
Czochralski process — The Czochralski process The Czochralski process is a method of crystal growth used to obtain single crystals of semiconductors (e.g. silicon, germanium and gallium arsenide), metals (e.g. palladium, platinum, silver, gold), salts, and synthetic … Wikipedia
Crystal structure of boron-rich metal borides — Two single crystals of YB66 (1 cm diameter) grown by floating zone technique using (100) oriented seeds. In the top crystal, the seed (left from the black line) has same diameter as the crystal. In the bottom crystal (sliced), the seed is much… … Wikipedia
Micro-pulling-down — Contents 1 Basics 2 Crystal growth routine 3 See also 4 References 5 External links … Wikipedia
Semiconductor device fabrication — Semiconductor manufacturing processes 10 µm 1971 3 µm 1975 1.5 µm 1982 … Wikipedia
Crystalline silicon — is a material consisting of one or more small silicon crystals. Polycrystalline silicon Polycrystalline silicon (or polysilicon, poly Si, or simply poly in context) is a material consisting of multiple small silicon crystals.Polycrystalline… … Wikipedia
Polycrystalline silicon — Polycrystalline silicon, also called polysilicon, is a material consisting of small silicon crystals. It differs from single crystal silicon, used for electronics and solar cells, and from amorphous silicon, used for thin film devices and solar… … Wikipedia
