- epitaxial growth technique
- эпитаксиальная технология
Большой англо-русский и русско-английский словарь. 2001.
epitaxial growth technique
Смотреть что такое "epitaxial growth technique" в других словарях:
Stranski-Krastanov growth — (SK growth, also Stransky Krastanov or Stranski Krastanow) is one of the three primary modes by which thin films grow epitaxially at a crystal surface or interface. Also known as layer plus island growth , the SK mode follows a two step process:… … Wikipedia
Hydride vapour phase epitaxy — or HVPE, is an epitaxial growth technique often employed to produce semiconductors such as GaN, GaAs, InP and their related compounds. Carrier gasses commonly used include Ammonia, Hydrogen and various chlorides … Wikipedia
materials science — the study of the characteristics and uses of various materials, as glass, plastics, and metals. [1960 65] * * * Study of the properties of solid materials and how those properties are determined by the material s composition and structure, both… … Universalium
Chemical beam epitaxy — (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III V semiconductor systems. This form of epitaxial growth is performed in an ultrahigh vacuum system. The reactants are in the form of molecular… … Wikipedia
Rudolf M. Tromp — Dr. Rudolf M. Tromp is a scientist at IBM Research Division, Thomas J. Watson Research CenterEducation*1992 Ph.D. in physics from the University of Utrecht (The Netherlands) *1982, completed a thesis on medium energy ion scattering (MEIS) studies … Wikipedia
crystal — crystallike, adj. /kris tl/, n., adj., v., crystaled, crystaling or (esp. Brit.) crystalled, crystalling. n. 1. a clear, transparent mineral or glass resembling ice. 2. the transparent form of crystallized quartz. 3. Chem., Mineral. a solid body… … Universalium
Crystal — /kris tl/, n. 1. a city in SE Minnesota, near Minneapolis. 25,543. 2. a female given name. * * * I Any solid material whose atoms are arranged in a definite pattern and whose surface regularity reflects its internal symmetry. Each of a crystal s… … Universalium
Mercury cadmium telluride — HgCdTe or mercury cadmium telluride (also cadmium mercury telluride, MCT or CMT) is an alloy of CdTe and HgTe and is sometimes claimed to be the third semiconductor of technological importance after silicon and gallium(III) arsenide. The amount… … Wikipedia
Metalorganic vapour phase epitaxy — (MOVPE), also known as organometallic vapour phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method of epitaxial growth of materials, especially compound semiconductors from the surface… … Wikipedia
Medard W. Welch Award — The award is given to scientists who demonstrated outstanding research in the fields pertinent to American Vacuum Society. It was established in 1969 in memory of Memory of Medard W. Welch, a founder of American Vacuum Society. The prestige of… … Wikipedia
Gallium arsenide — Gallium arsenide … Wikipedia
