- double poly MOS
- МОП-структура с двумя слоями поликремния
Большой англо-русский и русско-английский словарь. 2001.
Большой англо-русский и русско-английский словарь. 2001.
double polysilicon gate MOS process — MOP darinių su dvipakopėmis polikristalinio silicio užtūromis technologija statusas T sritis radioelektronika atitikmenys: angl. double polysilicon gate MOS process vok. Doppel Poly Si Gate MOS Technik, f rus. технология МОП структур с… … Radioelektronikos terminų žodynas
double-level polysilicon CMOS structure — jungtinis dvisluoksnio polikristalinio silicio MOP darinys statusas T sritis radioelektronika atitikmenys: angl. double level polysilicon CMOS structure; poly squared CMOS; poly squared CMOS structure vok. komplementäre MOS Struktur mit zwei… … Radioelektronikos terminų žodynas
poly squared CMOS — jungtinis dvisluoksnio polikristalinio silicio MOP darinys statusas T sritis radioelektronika atitikmenys: angl. double level polysilicon CMOS structure; poly squared CMOS; poly squared CMOS structure vok. komplementäre MOS Struktur mit zwei… … Radioelektronikos terminų žodynas
poly squared CMOS structure — jungtinis dvisluoksnio polikristalinio silicio MOP darinys statusas T sritis radioelektronika atitikmenys: angl. double level polysilicon CMOS structure; poly squared CMOS; poly squared CMOS structure vok. komplementäre MOS Struktur mit zwei… … Radioelektronikos terminų žodynas
Doppel-Poly-Si-Gate-MOS-Technik — MOP darinių su dvipakopėmis polikristalinio silicio užtūromis technologija statusas T sritis radioelektronika atitikmenys: angl. double polysilicon gate MOS process vok. Doppel Poly Si Gate MOS Technik, f rus. технология МОП структур с… … Radioelektronikos terminų žodynas
komplementäre MOS-Struktur mit zwei Polysiliziumebenen — jungtinis dvisluoksnio polikristalinio silicio MOP darinys statusas T sritis radioelektronika atitikmenys: angl. double level polysilicon CMOS structure; poly squared CMOS; poly squared CMOS structure vok. komplementäre MOS Struktur mit zwei… … Radioelektronikos terminų žodynas
technologie MOS pour circuit intégré à grille polysilicium à deux niveaux — MOP darinių su dvipakopėmis polikristalinio silicio užtūromis technologija statusas T sritis radioelektronika atitikmenys: angl. double polysilicon gate MOS process vok. Doppel Poly Si Gate MOS Technik, f rus. технология МОП структур с… … Radioelektronikos terminų žodynas
Floating-gate transistor — The floating gate transistor is a kind of transistor that is commonly used for non volatile storage such as flash, EPROM and EEPROM memory. Floating gate transistors are almost always floating gate MOSFETs.Floating gate MOSFETs are useful because … Wikipedia
Floating Gate MOSFET — The Floating Gate MOSFET (FGMOS) is a field effect transistor, whose structure is similar to a conventional MOSFET. The gate of the FGMOS is electrically isolated, creating a floating node in DC, and a number of secondary gates or inputs are… … Wikipedia
Mostek — Not to be confused with MOS Technology. For other uses, see Mostek (disambiguation). Mostek was an integrated circuit manufacturer, founded in 1969 by ex employees of Texas Instruments. Initially their products were manufactured in Worcester,… … Wikipedia
MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up … Wikipedia