- vacuum epitaxial growth
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• эпитаксиальное выращивание из газовой фазы в вакууме• эпитаксиальное выращивание из паровой фазы в вакууме
English-Russian dictionary of geology. 2011.
English-Russian dictionary of geology. 2011.
materials science — the study of the characteristics and uses of various materials, as glass, plastics, and metals. [1960 65] * * * Study of the properties of solid materials and how those properties are determined by the material s composition and structure, both… … Universalium
Epitaxy — refers to the method of depositing a monocrystalline film on a monocrystalline substrate. The deposited film is denoted as epitaxial film or epitaxial layer. The term epitaxy comes from a Greek root ( epi above and taxis in ordered manner ) which … Wikipedia
Chemical beam epitaxy — (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III V semiconductor systems. This form of epitaxial growth is performed in an ultrahigh vacuum system. The reactants are in the form of molecular… … Wikipedia
Rudolf M. Tromp — Dr. Rudolf M. Tromp is a scientist at IBM Research Division, Thomas J. Watson Research CenterEducation*1992 Ph.D. in physics from the University of Utrecht (The Netherlands) *1982, completed a thesis on medium energy ion scattering (MEIS) studies … Wikipedia
Medard W. Welch Award — The award is given to scientists who demonstrated outstanding research in the fields pertinent to American Vacuum Society. It was established in 1969 in memory of Memory of Medard W. Welch, a founder of American Vacuum Society. The prestige of… … Wikipedia
Sputter deposition — is a physical vapor deposition (PVD) method of depositing thin films by sputtering, that is ejecting, material from a target, that is source, which then deposits onto a substrate, such as a silicon wafer. Resputtering is re emission of the… … Wikipedia
GaMnAs — Gallium manganese arsenide (abbreviated GaMnAs, or (Ga,Mn)As, or Ga1 xMnxAs) is a dilute III V magnetic semiconductor based on doping gallium arsenide (GaAs) with manganese (Mn). Manganese atoms are substituted for gallium, creating both a local… … Wikipedia
Light-emitting diode — LED redirects here. For other uses, see LED (disambiguation). Light emitting diode Red, pure green and blue LEDs of the 5mm diffused type Type Passive, optoelectronic Working principle Electr … Wikipedia
Metalorganic vapour phase epitaxy — (MOVPE), also known as organometallic vapour phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method of epitaxial growth of materials, especially compound semiconductors from the surface… … Wikipedia
integrated circuit — Electronics. a circuit of transistors, resistors, and capacitors constructed on a single semiconductor wafer or chip, in which the components are interconnected to perform a given function. Abbr.: IC Also called microcircuit. [1955 60] * * * ▪… … Universalium
Zinc oxide — Other names Zinc white Calamine Identifiers … Wikipedia