reverse-biased junction isolation
1reverse-biased p-n junction isolation — izoliavimas užvertomis pn sandūromis statusas T sritis radioelektronika atitikmenys: angl. reverse biased p n junction isolation vok. Isolation durch in Sperrichtung vorgespannte p n Übergänge, f rus. изоляция обратносмещёнными p n переходами, f… …
2P-n junction isolation — is a method used to electrically isolate electronic components, such as transistors, on an integrated circuit (IC) by surrounding the components with reverse biased p n junctions. Contents 1 Introduction 2 Operation 3 History 4 …
3Isolation durch in Sperrichtung vorgespannte p-n-Übergänge — izoliavimas užvertomis pn sandūromis statusas T sritis radioelektronika atitikmenys: angl. reverse biased p n junction isolation vok. Isolation durch in Sperrichtung vorgespannte p n Übergänge, f rus. изоляция обратносмещёнными p n переходами, f… …
4isolation par jonctions polarisées en inverse — izoliavimas užvertomis pn sandūromis statusas T sritis radioelektronika atitikmenys: angl. reverse biased p n junction isolation vok. Isolation durch in Sperrichtung vorgespannte p n Übergänge, f rus. изоляция обратносмещёнными p n переходами, f… …
5MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up …
6PIN diode — Layers of a PIN diode A PIN diode is a diode with a wide, lightly doped near intrinsic semiconductor region between a p type semiconductor and an n type semiconductor region. The p type and n type regions are typically heavily doped because they… …
7Field-effect transistor — FET redirects here. For other uses, see FET (disambiguation). High power N channel field effect transistor The field effect transistor (FET) is a transistor that relies on an electric field to control the shape and hence the conductivity of a… …
8Photodiode — Three Si and one Ge (bottom) photodiodes Symbol for photodiode …
9izoliavimas užvertomis pn sandūromis — statusas T sritis radioelektronika atitikmenys: angl. reverse biased p n junction isolation vok. Isolation durch in Sperrichtung vorgespannte p n Übergänge, f rus. изоляция обратносмещёнными p n переходами, f pranc. isolation par jonctions… …
10изоляция обратносмещёнными p-n-переходами — izoliavimas užvertomis pn sandūromis statusas T sritis radioelektronika atitikmenys: angl. reverse biased p n junction isolation vok. Isolation durch in Sperrichtung vorgespannte p n Übergänge, f rus. изоляция обратносмещёнными p n переходами, f… …
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