ion beam density
1Low-energy ion scattering — LEIS redirects here; for the Hawaiian garland see Lei (Hawaii). Low energy ion scattering spectroscopy (LEIS), sometimes referred to simply as ion scattering spectroscopy (ISS), is a surface sensitive analytical technique used to characterize the …
2Static secondary ion mass spectrometry — Static secondary ion mass spectrometry, or static SIMS is a technique for chemical analysis including elemental composition and chemical structure of the uppermost atomic or molecular layer of a solid which may be a metal, semiconductor or… …
3Secondary ion mass spectrometry — Infobox chemical analysis name = Secondary ion mass spectrometry caption =CAMECA IMS3f Magnetic SIMS Instrument acronym = SIMS classification =Mass spectrometry analytes = Solid surfaces, thin films related = Fast atom bombardment… …
4Electron beam physical vapor deposition — or EBPVD is a form of physical vapor deposition in which a target anode is bombarded with an electron beam given off by a charged tungsten filament under high vacuum. The electron beam causes atoms from the target to transform into the gaseous… …
5Plasma-immersion ion implantation — (PIII) [cite book | title = Materials Science of Thin Films | author = Milton Ohring | publisher = Academic Press | year = 2002 | isbn = 0125249756 | url = http://books.google.com/books?id=SOt yFjV xwC pg=PA267… …
6Relativistic Heavy Ion Collider — Hadron colliders Caption=The Relativistic Heavy Ion Collider at Brookhaven National Laboratory. Some of the superconducting magnets were manufactured by Northrop Grumman Corp. at Bethpage, New York. Note especially the second, independent ring… …
7Charged particle beam — A charged particle beam is a spatially localized group of electrically charged particles that have approximately the same velocity (speed and direction). The kinetic energies of the particles are typically measured in keV or MeV, much larger than …
8Deep reactive-ion etching — (DRIE) is a highly anisotropic etch process used to create deep penetration, steep sided holes and trenches in wafers, with aspect ratios of 20:1 or more. It was developed for microelectromechanical systems (MEMS), which require these features,… …
9Chemical beam epitaxy — (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III V semiconductor systems. This form of epitaxial growth is performed in an ultrahigh vacuum system. The reactants are in the form of molecular… …
10Mass-analyzed ion kinetic energy spectrometry — (MIKES) is a mass spectrometry technique by which mass spectra are obtained from a sector mass spectrometer that incorporates at least one magnetic sector plus one electric sector in reverse geometry (the beam first enters the magnetic… …
