forward-biased junction
1forward-biased junction — atvertoji sandūra statusas T sritis automatika atitikmenys: angl. forward biased junction vok. in Durchlaßrichtung vorgespannter Übergang, m rus. прямосмещённый переход, m pranc. jonction polarisée en direct, f …
2Bipolar junction transistor — BJT redirects here. For the Japanese language proficiency test, see Business Japanese Proficiency Test. PNP …
3p-n junction — A silicon p–n junction with no applied voltage. A p–n junction is formed at the boundary between a P type and N type semiconductor created in a single crystal of semiconductor by doping, for example by ion implantation, diffusion of dopants, or… …
4P-n junction — A p n junction is a junction formed by combining P type and N type semiconductors together in very close contact. The term junction refers to the region where the two regions of the semiconductor meet. It can be thought of as the border region… …
5Diffusion capacitance — is the capacitance due to transport of charge carriers between two terminals of a device, for example, the diffusion of carriers from anode to cathode in forward bias mode of a diode or from emitter to base (forward biased junction in active… …
6atvertoji sandūra — statusas T sritis automatika atitikmenys: angl. forward biased junction vok. in Durchlaßrichtung vorgespannter Übergang, m rus. прямосмещённый переход, m pranc. jonction polarisée en direct, f …
7in Durchlaßrichtung vorgespannter Übergang — atvertoji sandūra statusas T sritis automatika atitikmenys: angl. forward biased junction vok. in Durchlaßrichtung vorgespannter Übergang, m rus. прямосмещённый переход, m pranc. jonction polarisée en direct, f …
8jonction polarisée en direct — atvertoji sandūra statusas T sritis automatika atitikmenys: angl. forward biased junction vok. in Durchlaßrichtung vorgespannter Übergang, m rus. прямосмещённый переход, m pranc. jonction polarisée en direct, f …
9прямосмещённый переход — atvertoji sandūra statusas T sritis automatika atitikmenys: angl. forward biased junction vok. in Durchlaßrichtung vorgespannter Übergang, m rus. прямосмещённый переход, m pranc. jonction polarisée en direct, f …
10semiconductor device — ▪ electronics Introduction electronic circuit component made from a material that is neither a good conductor nor a good insulator (hence semiconductor). Such devices have found wide applications because of their compactness, reliability,… …
