enhancement-mode mosfet

  • 1enhancement-mode MOS field-effect transistor — praturtintosios veikos MOP tranzistorius statusas T sritis radioelektronika atitikmenys: angl. enhancement MOS FET; enhancement mode MOS field effect transistor vok. Anreicherungstyp MOSFET, m; Metall Oxid Halbleiter Feldeffekttransistor des… …

    Radioelektronikos terminų žodynas

  • 2MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up …

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  • 3MOSFET — Transistor à effet de champ à grille métal oxyde Un transistor à effet de champ (à grille) métal oxyde est un type de transistor à effet de champ ; on utilise souvent le terme MOSFET, acronyme anglais de metal oxide semiconductor field… …

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  • 4enhancement MOS FET — praturtintosios veikos MOP tranzistorius statusas T sritis radioelektronika atitikmenys: angl. enhancement MOS FET; enhancement mode MOS field effect transistor vok. Anreicherungstyp MOSFET, m; Metall Oxid Halbleiter Feldeffekttransistor des… …

    Radioelektronikos terminų žodynas

  • 5Depletion and enhancement modes — In field effect transistors (FETs), depletion mode and enhancement mode are two major transistor types, corresponding to whether the transistor is in an ON state or an OFF state at zero gate–source voltage. Enhancement mode MOSFETs are the common …

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  • 6Anreicherungstyp-MOSFET — praturtintosios veikos MOP tranzistorius statusas T sritis radioelektronika atitikmenys: angl. enhancement MOS FET; enhancement mode MOS field effect transistor vok. Anreicherungstyp MOSFET, m; Metall Oxid Halbleiter Feldeffekttransistor des… …

    Radioelektronikos terminų žodynas

  • 7Field-effect transistor — FET redirects here. For other uses, see FET (disambiguation). High power N channel field effect transistor The field effect transistor (FET) is a transistor that relies on an electric field to control the shape and hence the conductivity of a… …

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  • 82N7000 — The 2N7000 is a N channel, enhancement mode MOSFET used for small signal switching applications. Packaged in a TO92 enclosure, the 2N7000 is a 60 volt device capable of switching in the 200 350 milliamp range with an on resistance of 0.3 5 ohms.… …

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  • 9Transistor — For other uses, see Transistor (disambiguation). Assorted discrete transistors. Packages in order from top to bottom: TO 3, TO 126, TO 92, SOT 23 A transistor is a semiconductor device used to amplify and switch electronic signals and power. It… …

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  • 10Insulated-gate bipolar transistor — The insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device, noted for high efficiency and fast switching. It switches electric power in many modern appliances: electric cars, variable speed refrigerators, air… …

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